ZnO is a II-VI compound semiconductor with a bandgap energy of 3.4 eV. It
is a potential material since it has advantages, large
exciton binding energy of 60 meV, transparent in visible region, easy to obtain
n-type conductivity, an abundant and
none-toxic material. We are investigating ZnO films and nanoparticles for the
applications of high efficiency UV light emitters (LEDs for solid sate
lightning, UV LDs), devices using transparent conductive films and nano-bio,
nano-medical applications.
- Growth of ZnO
epitaxial films by MOCVD
- ZnO
nanoparticles
- Nano-bio,
nano-medical applications
| 1986～1989 |
The first Technical Research Institute Nippon Steel Corporation
He was engaged in the research of HgCdTe infrared ray sensor .
|
| 1989～1995 |
Chief researcher Electronics laboratory Nippon Steel Corporation
He was engaged in Development AlGaAs for information processing and System
ZnSe blue semiconductor LDs. |
| 1995～1997 |
Chief researcher Advanced Technology Research Laboratories Nippon Steel
Corporation
He was engaged in Development of Electronic device of GaAs on Si heteroepitaxy. |
| 1997～1998 |
Chief researcher LSI division Nippon Steel Corporation
He was engaged in Development of Interlayer dielectric for ULSI of Dense
plasma CVD.
|
| 1999～ |
Assistant professor Interdisciplinary Faculty of Science and Engineering
Shimane University
He was engaged in the research of Compound semiconductor optical device.
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